RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Samsung V-GeN D4S4GL30A16TS5 4GB
Compare
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB vs Samsung V-GeN D4S4GL30A16TS5 4GB
Overall score
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Overall score
Samsung V-GeN D4S4GL30A16TS5 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Report a bug
Below the latency in the PassMark tests, ns
46
62
Around 26% lower latency
Faster write speed, GB/s
13.6
7.0
Average value in the tests
Higher memory bandwidth, mbps
21300
19200
Around 1.11% higher bandwidth
Reasons to consider
Samsung V-GeN D4S4GL30A16TS5 4GB
Report a bug
Faster reading speed, GB/s
16.7
14.2
Average value in the tests
Specifications
Complete list of technical specifications
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Samsung V-GeN D4S4GL30A16TS5 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
46
62
Read speed, GB/s
14.2
16.7
Write speed, GB/s
13.6
7.0
Memory bandwidth, mbps
21300
19200
Other
Description
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2717
1808
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung V-GeN D4S4GL30A16TS5 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston ACR512X64D3S13C9G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Crucial Technology CT102464BF160B-16F 8GB
G Skill Intl F4-3200C16-16GTZSK 16GB
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology BL8G30C15U4BL.M8FE1 8GB
Swissbit MEU25664D6BC2EP-30 2GB
Corsair CM4X16GE2666C18S2 16GB
takeMS International AG TMS2GB264D082-805G 2GB
Kingston 9905713-028.A00G 8GB
Samsung M393B1K70CH0-CH9 8GB
Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Corsair CMV16GX4M1A2133C15 16GB
Samsung M471A1G43EB1-CRC 8GB
Samsung M471A1K1KBB0-CPB 8GB
G Skill Intl F3-1333C9-4GIS 4GB
Corsair CM4B16G1J2400A16K2-O 16GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Crucial Technology CT4G4DFS8213.C8FADP 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
SK Hynix HMAA1GU6CJR6N-XN 8GB
Samsung DDR3 8GB 1600MHz 8GB
Corsair CMD32GX4M4B3866C18 8GB
Samsung M471B1G73DB0-YK0 8GB
Crucial Technology CT8G4DFD824A.C16FDD2 8GB
SK Hynix HYMP164U64CP6-Y5 512MB
Micron Technology 18ASF1G72AZ-2G1B1 8GB
Samsung M3 78T2863EHS-CF7 1GB
SK Hynix HMA82GU7MFR8N-TF 16GB
Report a bug
×
Bug description
Source link