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SK Hynix HMT351R7EFR8C-RD 4GB
Samsung M474A1G43DB0-CPB 8GB

SK Hynix HMT351R7EFR8C-RD 4GB vs Samsung M474A1G43DB0-CPB 8GB

Overall score
star star star star star
SK Hynix HMT351R7EFR8C-RD 4GB

SK Hynix HMT351R7EFR8C-RD 4GB

Overall score
star star star star star
Samsung M474A1G43DB0-CPB 8GB

Samsung M474A1G43DB0-CPB 8GB

Differences Specifications Comments

Differences

SK Hynix HMT351R7EFR8C-RD 4GB Reasons to consider
SK Hynix HMT351R7EFR8C-RD 4GB
Report a bug
  • Faster reading speed, GB/s
    9.8 left arrow 9.7
    Average value in the tests
  • Faster write speed, GB/s
    7.2 left arrow 6.8
    Average value in the tests
Samsung M474A1G43DB0-CPB 8GB Reasons to consider
Samsung M474A1G43DB0-CPB 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    27 left arrow 37
    Around -37% lower latency
  • Higher memory bandwidth, mbps
    17000 left arrow 14900
    Around 1.14 higher bandwidth

Specifications

Complete list of technical specifications
SK Hynix HMT351R7EFR8C-RD 4GB
Samsung M474A1G43DB0-CPB 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    37 left arrow 27
  • Read speed, GB/s
    9.8 left arrow 9.7
  • Write speed, GB/s
    7.2 left arrow 6.8
  • Memory bandwidth, mbps
    14900 left arrow 17000
Other
  • Description
    PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • Timings / Clock speed
    9-10-9-28 / 1866 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2065 left arrow 1767

SK Hynix HMT351R7EFR8C-RD 4GB RAM comparisons

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
SK Hynix HMT351R7EFR4A-H9 4GB

Samsung M474A1G43DB0-CPB 8GB RAM comparisons

Corsair CM5S16GM4800A40N2 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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