takeMS International AG TMS2GB264D083805EV 2GB
Chun Well Technology Holding Limited D4U0836144B 8GB

takeMS International AG TMS2GB264D083805EV 2GB vs Chun Well Technology Holding Limited D4U0836144B 8GB

Overall score
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takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

Overall score
star star star star star
Chun Well Technology Holding Limited D4U0836144B 8GB

Chun Well Technology Holding Limited D4U0836144B 8GB

Differences

  • Faster reading speed, GB/s
    3 left arrow 16.4
    Average value in the tests
  • Below the latency in the PassMark tests, ns
    19 left arrow 50
    Around -163% lower latency
  • Faster write speed, GB/s
    14.9 left arrow 1,457.4
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 6400
    Around 3.33 higher bandwidth

Specifications

Complete list of technical specifications
takeMS International AG TMS2GB264D083805EV 2GB
Chun Well Technology Holding Limited D4U0836144B 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    50 left arrow 19
  • Read speed, GB/s
    3,757.3 left arrow 16.4
  • Write speed, GB/s
    1,457.4 left arrow 14.9
  • Memory bandwidth, mbps
    6400 left arrow 21300
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 14 16 18 19 20
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    557 left arrow 3521
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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