RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
A-DATA Technology ADOVE1A0834E 1GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
Compare
A-DATA Technology ADOVE1A0834E 1GB vs Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
Overall score
A-DATA Technology ADOVE1A0834E 1GB
Overall score
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
A-DATA Technology ADOVE1A0834E 1GB
Report a bug
Reasons to consider
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
Report a bug
Below the latency in the PassMark tests, ns
23
94
Around -309% lower latency
Faster reading speed, GB/s
18.1
1
Average value in the tests
Faster write speed, GB/s
15.0
1,165.4
Average value in the tests
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
A-DATA Technology ADOVE1A0834E 1GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
94
23
Read speed, GB/s
1,882.0
18.1
Write speed, GB/s
1,165.4
15.0
Memory bandwidth, mbps
6400
21300
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
305
3317
A-DATA Technology ADOVE1A0834E 1GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-3300C16-8GTZSW 8GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B1K70CH0-CH9 8GB
Corsair CMR16GX4M2C 8GB
Samsung M393B2G70BH0-CH9 16GB
Samsung M386A8K40BM1-CRC 64GB
A-DATA Technology ADOVE1A0834E 1GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
Corsair CMK32GX5M2B5600C36 16GB
Samsung M393A2K40BB2-CTD 16GB
Smart Modular SH564128FH8NZQNSCG 4GB
Kingston KHX2400C15D4/8G 8GB
A-DATA Technology DDR3 1333G 2GB
G Skill Intl F4-4000C17-16GTRGB 16GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
Crucial Technology CT8G4SFRA266.C4FE 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
G Skill Intl F4-4000C16-16GTZRA 16GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Corsair CMK16GX4M2Z3200C16 8GB
Kingston KVR800D2N6/2G 2GB
Kingston 9905701-098.A00G 16GB
Samsung M3 78T2863EHS-CF7 1GB
Corsair CMK32GX4M4D3000C16 8GB
PUSKILL DDR3 1600 8G 8GB
Corsair CM4X8GF2400C16N2 8GB
Kingston 99U5428-063.A00LF 8GB
SK Hynix HMA81GS6CJR8N-XN 8GB
Samsung M3 78T2863EHS-CF7 1GB
Kingston 9965600-011.A01G 16GB
Report a bug
×
Bug description
Source link