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A-DATA Technology DDR4 2666 2OZ 4GB
Samsung DDR3 8GB 1600MHz 8GB
Compare
A-DATA Technology DDR4 2666 2OZ 4GB vs Samsung DDR3 8GB 1600MHz 8GB
Overall score
A-DATA Technology DDR4 2666 2OZ 4GB
Overall score
Samsung DDR3 8GB 1600MHz 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
A-DATA Technology DDR4 2666 2OZ 4GB
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Below the latency in the PassMark tests, ns
30
43
Around 30% lower latency
Faster reading speed, GB/s
16.7
14.9
Average value in the tests
Faster write speed, GB/s
12.3
9.6
Average value in the tests
Higher memory bandwidth, mbps
17000
12800
Around 1.33% higher bandwidth
Reasons to consider
Samsung DDR3 8GB 1600MHz 8GB
Report a bug
Specifications
Complete list of technical specifications
A-DATA Technology DDR4 2666 2OZ 4GB
Samsung DDR3 8GB 1600MHz 8GB
Main characteristics
Memory type
DDR4
DDR3
Latency in PassMark, ns
30
43
Read speed, GB/s
16.7
14.9
Write speed, GB/s
12.3
9.6
Memory bandwidth, mbps
17000
12800
Other
Description
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
Timings / Clock speed
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
9-9-9-24 / 1600 MHz
Ranking PassMark (The more the better)
3106
2506
A-DATA Technology DDR4 2666 2OZ 4GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung DDR3 8GB 1600MHz 8GB RAM comparisons
A-DATA Technology DDR3L 1333G 4GB
A-DATA Technology DDR4 3200 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Absolute Latency
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RAM 2
CAS Latency (CL) *
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Absolute Latency
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