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AMD R534G1601U1S-UO 4GB
Hynix Semiconductor (Hyundai Electronics) HMT451U6AFR8C-PB 4GB

AMD R534G1601U1S-UO 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT451U6AFR8C-PB 4GB

Overall score
star star star star star
AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT451U6AFR8C-PB 4GB

Hynix Semiconductor (Hyundai Electronics) HMT451U6AFR8C-PB 4GB

Differences Specifications Comments

Differences

AMD R534G1601U1S-UO 4GB Reasons to consider
AMD R534G1601U1S-UO 4GB
Report a bug
  • Faster reading speed, GB/s
    14.7 left arrow 13.3
    Average value in the tests
  • Faster write speed, GB/s
    9.2 left arrow 8.1
    Average value in the tests
Hynix Semiconductor (Hyundai Electronics) HMT451U6AFR8C-PB 4GB Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT451U6AFR8C-PB 4GB
Report a bug

Specifications

Complete list of technical specifications
AMD R534G1601U1S-UO 4GB
Hynix Semiconductor (Hyundai Electronics) HMT451U6AFR8C-PB 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    27 left arrow 27
  • Read speed, GB/s
    14.7 left arrow 13.3
  • Write speed, GB/s
    9.2 left arrow 8.1
  • Memory bandwidth, mbps
    12800 left arrow 12800
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • Ranking PassMark (The more the better)
    2272 left arrow 2225

AMD R534G1601U1S-UO 4GB RAM comparisons

AMD R534G1601U1S 4GB
Samsung M378B5273CH0-CH9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT451U6AFR8C-PB 4GB RAM comparisons

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ACPI Digital Co. Ltd. CMA6-4FA01AAR01A00 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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