AMD R534G1601U1S-UO 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT451U6AFR8C-PB 4GB

Punteggio complessivo

AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

Punteggio complessivo

Hynix Semiconductor (Hyundai Electronics) HMT451U6AFR8C-PB 4GB

Hynix Semiconductor (Hyundai Electronics) HMT451U6AFR8C-PB 4GB

Differenze Specifiche tecniche Commenti

Differenze

AMD R534G1601U1S-UO 4GB

Motivi da considerare
AMD R534G1601U1S-UO 4GB

Velocità di lettura più elevata, GB/s

14.7 13.3

Valore medio nei test
Velocità di scrittura più elevata, GB/s

9.2 8.1

Valore medio nei test

Hynix Semiconductor (Hyundai Electronics) HMT451U6AFR8C-PB 4GB

Motivi da considerare
Hynix Semiconductor (Hyundai Electronics) HMT451U6AFR8C-PB 4GB

Specifiche tecniche

Elenco completo delle specifiche tecniche

AMD R534G1601U1S-UO 4GB

Hynix Semiconductor (Hyundai Electronics) HMT451U6AFR8C-PB 4GB

Caratteristiche principali

Tipo di memoria

DDR3 DDR3
Latenza in PassMark, ns

27 27
Velocità di lettura, GB/s

14.7 13.3
Velocità di scrittura, GB/s

9.2 8.1
Larghezza di banda della memoria, mbps

12800 12800

Other

Descrizione

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
Temporizzazioni / Velocità di clock

9-9-9-24 / 1600 MHz 9-9-9-24 / 1600 MHz
Classifica PassMark (più sono, meglio è)

2272 2225

RAM Latency Calculator

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RAM 2

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