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Corsair CMY8GX3M2A2666C10 4GB
Shenzhen Technology Co Ltd 8GB
Compare
Corsair CMY8GX3M2A2666C10 4GB vs Shenzhen Technology Co Ltd 8GB
Overall score
Corsair CMY8GX3M2A2666C10 4GB
Overall score
Shenzhen Technology Co Ltd 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Corsair CMY8GX3M2A2666C10 4GB
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Below the latency in the PassMark tests, ns
17
32
Around 47% lower latency
Faster reading speed, GB/s
22.8
15.9
Average value in the tests
Faster write speed, GB/s
15.4
11.9
Average value in the tests
Reasons to consider
Shenzhen Technology Co Ltd 8GB
Report a bug
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Corsair CMY8GX3M2A2666C10 4GB
Shenzhen Technology Co Ltd 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
17
32
Read speed, GB/s
22.8
15.9
Write speed, GB/s
15.4
11.9
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
3391
2831
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2
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Absolute Latency
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