Corsair VS1GB800D2 1GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Corsair VS1GB800D2 1GB vs Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Overall score
star star star star star
Corsair VS1GB800D2 1GB

Corsair VS1GB800D2 1GB

Overall score
star star star star star
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Differences

  • Faster reading speed, GB/s
    4 left arrow 16
    Average value in the tests
  • Below the latency in the PassMark tests, ns
    37 left arrow 47
    Around -27% lower latency
  • Faster write speed, GB/s
    12.6 left arrow 1,361.1
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 6400
    Around 3 higher bandwidth

Specifications

Complete list of technical specifications
Corsair VS1GB800D2 1GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    47 left arrow 37
  • Read speed, GB/s
    4,680.7 left arrow 16.0
  • Write speed, GB/s
    1,361.1 left arrow 12.6
  • Memory bandwidth, mbps
    6400 left arrow 19200
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    460 left arrow 2808
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

Latest comparisons