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Corsair VS1GB800D2 1GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Compare
Corsair VS1GB800D2 1GB vs Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Overall score
Corsair VS1GB800D2 1GB
Overall score
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Corsair VS1GB800D2 1GB
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Faster reading speed, GB/s
4
16
Average value in the tests
Reasons to consider
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Report a bug
Below the latency in the PassMark tests, ns
37
47
Around -27% lower latency
Faster write speed, GB/s
12.6
1,361.1
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
Corsair VS1GB800D2 1GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
47
37
Read speed, GB/s
4,680.7
16.0
Write speed, GB/s
1,361.1
12.6
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
460
2808
Corsair VS1GB800D2 1GB RAM comparisons
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Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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