RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Crucial Technology CT51264BD1339.M16F 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
Compare
Crucial Technology CT51264BD1339.M16F 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
Overall score
Crucial Technology CT51264BD1339.M16F 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Crucial Technology CT51264BD1339.M16F 4GB
Report a bug
Below the latency in the PassMark tests, ns
25
37
Around 32% lower latency
Faster reading speed, GB/s
12.1
9.5
Average value in the tests
Faster write speed, GB/s
8.6
7.7
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
Report a bug
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Crucial Technology CT51264BD1339.M16F 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
37
Read speed, GB/s
12.1
9.5
Write speed, GB/s
8.6
7.7
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2045
1949
Crucial Technology CT51264BD1339.M16F 4GB RAM comparisons
Swissbit SLN04G64E1BQ2SA-DC 4GB
Kingston 9905471-030.A00LF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB RAM comparisons
Samsung M471B5173QH0-YK0 4GB
Samsung M393B1G70BH0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B5273CH0-CH9 4GB
A-DATA Technology AM2P32NC8W1-BCFS 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Avexir Technologies Corporation DDR4-2133 CL15 16GB 16G
Ramaxel Technology RMR5040ED58E9W1600 4GB
Crucial Technology BLM16G40C18U4B.M8FB1 16GB
Nanya Technology M2F4G64CB8HG4N-DI 4GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
A-DATA Technology AO1P26KC8T1-BXFSHC 8GB
Crucial Technology BLS8G3N169ES4.16FE 8GB
Crucial Technology CT16G4DFRA266.C16FP 16GB
Samsung M471B5273EB0-CK0 4GB
Corsair CMK16GX4M2Z3600C20 8GB
Nanya Technology M2F4G64CB8HB9N-CG 4GB
Chun Well Technology Holding Limited CL18-20-20 D4-3200
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CM4X32GE2666C18S2 32GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology ILG8GS2400A 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Wilk Elektronik S.A. GR2666D464L19/16GN 16GB
Kingston KHX1600C9S3L/4G 4GB
Apacer Technology 78.CAGP7.40C0B 8GB
Kingston 9905403-156.A00LF 2GB
Corsair CMK16GX4M4B3600C18 4GB
Report a bug
×
Bug description
Source link