RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Crucial Technology CT8G4DFRA266.C8FN 8GB
Crucial Technology CT8G4DFD8213.C16FBR2 8GB
Compare
Crucial Technology CT8G4DFRA266.C8FN 8GB vs Crucial Technology CT8G4DFD8213.C16FBR2 8GB
Overall score
Crucial Technology CT8G4DFRA266.C8FN 8GB
Overall score
Crucial Technology CT8G4DFD8213.C16FBR2 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Crucial Technology CT8G4DFRA266.C8FN 8GB
Report a bug
Below the latency in the PassMark tests, ns
29
34
Around 15% lower latency
Faster reading speed, GB/s
15.5
14.8
Average value in the tests
Faster write speed, GB/s
12.4
11.0
Average value in the tests
Higher memory bandwidth, mbps
21300
17000
Around 1.25% higher bandwidth
Reasons to consider
Crucial Technology CT8G4DFD8213.C16FBR2 8GB
Report a bug
Specifications
Complete list of technical specifications
Crucial Technology CT8G4DFRA266.C8FN 8GB
Crucial Technology CT8G4DFD8213.C16FBR2 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
29
34
Read speed, GB/s
15.5
14.8
Write speed, GB/s
12.4
11.0
Memory bandwidth, mbps
21300
17000
Other
Description
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
Timings / Clock speed
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
3091
2652
Crucial Technology CT8G4DFRA266.C8FN 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT8G4DFD8213.C16FBR2 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung V-GeN D4S4GL32A8TL 4GB
G Skill Intl F3-1333C9-4GIS 4GB
Patriot Memory (PDP Systems) 2400 C14 Series 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Kingston KHX3600C18D4/16GX 16GB
Elpida EBJ81UG8BBU0-GN-F 8GB
G Skill Intl F4-4266C19-8GTZR 8GB
Samsung M471B5173DB0-YK0 4GB
A-DATA Technology AO1P32NC8T1-BCIS 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BLT8G4D30AETA.K16FE 8GB
Samsung M391B5673FH0-CH9 2GB
SK Hynix HMA82GS7AFR8N-UH 16GB
Samsung M391B5673EH1-CH9 2GB
Corsair CMV16GX4M1L2400C16 16GB
Kingston 9965525-018.A00LF 4GB
A-DATA Technology AM2P24HC4R1-BUPS 4GB
Kingston 99U5584-001.A00LF 4GB
G Skill Intl F4-3200C15-8GVR 8GB
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-3000C16-8GISB 8GB
Kingston KHX1600C9D3/4G 4GB
Crucial Technology BLS8G4D26BFSBK.8FD 8GB
AMD AE34G1601U1 4GB
Patriot Memory (PDP Systems) 3600 C14 Series 8GB
Samsung M471B5273CH0-CH9 4GB
Kingston KTD3KX-HYA 8GB
Report a bug
×
Bug description
Source link