Elpida EBJ10UE8BAFA-AE-E 1GB
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

Elpida EBJ10UE8BAFA-AE-E 1GB vs OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

Overall score
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Elpida EBJ10UE8BAFA-AE-E 1GB

Elpida EBJ10UE8BAFA-AE-E 1GB

Overall score
star star star star star
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

Differences

  • Below the latency in the PassMark tests, ns
    27 left arrow 65
    Around -141% lower latency
  • Faster reading speed, GB/s
    17.4 left arrow 6.1
    Average value in the tests
  • Faster write speed, GB/s
    14.5 left arrow 4.2
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 8500
    Around 3.01 higher bandwidth

Specifications

Complete list of technical specifications
Elpida EBJ10UE8BAFA-AE-E 1GB
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    65 left arrow 27
  • Read speed, GB/s
    6.1 left arrow 17.4
  • Write speed, GB/s
    4.2 left arrow 14.5
  • Memory bandwidth, mbps
    8500 left arrow 25600
Other
  • Description
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • Timings / Clock speed
    7-7-7-20 / 1066 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    985 left arrow 3692
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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