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Elpida EBJ10UE8BAFA-AE-E 1GB
Samsung M378A5244CB0-CVF 4GB

Elpida EBJ10UE8BAFA-AE-E 1GB vs Samsung M378A5244CB0-CVF 4GB

Overall score
star star star star star
Elpida EBJ10UE8BAFA-AE-E 1GB

Elpida EBJ10UE8BAFA-AE-E 1GB

Overall score
star star star star star
Samsung M378A5244CB0-CVF 4GB

Samsung M378A5244CB0-CVF 4GB

Differences Specifications Comments

Differences

Elpida EBJ10UE8BAFA-AE-E 1GB Reasons to consider
Elpida EBJ10UE8BAFA-AE-E 1GB
Report a bug
Samsung M378A5244CB0-CVF 4GB Reasons to consider
Samsung M378A5244CB0-CVF 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    30 left arrow 65
    Around -117% lower latency
  • Faster reading speed, GB/s
    16 left arrow 6.1
    Average value in the tests
  • Faster write speed, GB/s
    12.3 left arrow 4.2
    Average value in the tests
  • Higher memory bandwidth, mbps
    23400 left arrow 8500
    Around 2.75 higher bandwidth

Specifications

Complete list of technical specifications
Elpida EBJ10UE8BAFA-AE-E 1GB
Samsung M378A5244CB0-CVF 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    65 left arrow 30
  • Read speed, GB/s
    6.1 left arrow 16.0
  • Write speed, GB/s
    4.2 left arrow 12.3
  • Memory bandwidth, mbps
    8500 left arrow 23400
Other
  • Description
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
  • Timings / Clock speed
    7-7-7-20 / 1066 MHz left arrow 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
  • Ranking PassMark (The more the better)
    985 left arrow 2709

Elpida EBJ10UE8BAFA-AE-E 1GB RAM comparisons

Corsair CM3X1G1600C9 1GB
Corsair CM4X8GF2666C16K8 8GB

Samsung M378A5244CB0-CVF 4GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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