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Golden Empire 1GB DDR2 800 CAS=4 1GB
Micron Technology 8ATF2G64AZ-3G2E1 16GB

Golden Empire 1GB DDR2 800 CAS=4 1GB vs Micron Technology 8ATF2G64AZ-3G2E1 16GB

Overall score
star star star star star
Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Overall score
star star star star star
Micron Technology 8ATF2G64AZ-3G2E1 16GB

Micron Technology 8ATF2G64AZ-3G2E1 16GB

Differences Specifications Comments

Differences

Golden Empire 1GB DDR2 800 CAS=4 1GB Reasons to consider
Golden Empire 1GB DDR2 800 CAS=4 1GB
Report a bug
  • Faster reading speed, GB/s
    4 left arrow 16.9
    Average value in the tests
  • Faster write speed, GB/s
    2,066.5 left arrow 10.4
    Average value in the tests
Micron Technology 8ATF2G64AZ-3G2E1 16GB Reasons to consider
Micron Technology 8ATF2G64AZ-3G2E1 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    33 left arrow 49
    Around -48% lower latency
  • Higher memory bandwidth, mbps
    25600 left arrow 6400
    Around 4 higher bandwidth

Specifications

Complete list of technical specifications
Golden Empire 1GB DDR2 800 CAS=4 1GB
Micron Technology 8ATF2G64AZ-3G2E1 16GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    49 left arrow 33
  • Read speed, GB/s
    4,577.1 left arrow 16.9
  • Write speed, GB/s
    2,066.5 left arrow 10.4
  • Memory bandwidth, mbps
    6400 left arrow 25600
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    737 left arrow 3035

Golden Empire 1GB DDR2 800 CAS=4 1GB RAM comparisons

Samsung M395T5663QZ4-CE66 1GB
Kingston TCM633-QAC 1GB

Micron Technology 8ATF2G64AZ-3G2E1 16GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Latest comparisons

Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Micron Technology 8ATF2G64AZ-3G2E1 16GB
Micron Technology 8ATF2G64AZ-3G2E1 16GB
Memory RAM
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Samsung M471B5273EB0-CK0 4GB
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Kingston 9905702-150.A00G 8GB
Memory RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
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Ramaxel Technology RMUA5200MJ78HAF-3200 8GB
Memory RAM
Samsung M471B5674QH0-YK0 2GB
Samsung M471B5674QH0-YK0 2GB
G Skill Intl F4-3200C16-4GTZ 4GB
G Skill Intl F4-3200C16-4GTZ 4GB
Memory RAM
Team Group Inc. Team-Elite-1333 4GB
Team Group Inc. Team-Elite-1333 4GB
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G Skill Intl F4-3300C16-8GTZKW 8GB
Memory RAM
Samsung M393B1K70CH0-YH9 8GB
Samsung M393B1K70CH0-YH9 8GB
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Kingston HP26D4U9S8MD-8 8GB
Memory RAM
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Samsung M393B1K70CH0-YH9 8GB
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SK Hynix HMA82GR8AMR4N-TF 16GB
Memory RAM
Kingston 9905403-038.A00G 4GB
Kingston 9905403-038.A00G 4GB
Crucial Technology CT8G4SFS632A.C4FE 8GB
Crucial Technology CT8G4SFS632A.C4FE 8GB
Memory RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT16G4DFD8213.C16FDD 16GB
Crucial Technology CT16G4DFD8213.C16FDD 16GB
Memory RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Micron Technology 4ATF51264AZ-2G6E1 4GB
Micron Technology 4ATF51264AZ-2G6E1 4GB
Memory RAM
Unifosa Corporation HU564404EP0200 4GB
Unifosa Corporation HU564404EP0200 4GB
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Corsair CMK16GX4M1A2400C14 16GB
Memory RAM
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TwinMOS 8DPT5MK8-TATP 2GB
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Crucial Technology CT8G4DFS8266.M8FH 8GB
Memory RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
G Skill Intl F4-3733C17-16GTZKK 16GB
G Skill Intl F4-3733C17-16GTZKK 16GB
Memory RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
G Skill Intl F4-3000C16-8GSXKB 8GB
G Skill Intl F4-3000C16-8GSXKB 8GB
Memory RAM