RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
Panram International Corporation PUD42133C138G4NJK 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB vs Panram International Corporation PUD42133C138G4NJK 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
Overall score
Panram International Corporation PUD42133C138G4NJK 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
Report a bug
Below the latency in the PassMark tests, ns
34
74
Around 54% lower latency
Reasons to consider
Panram International Corporation PUD42133C138G4NJK 8GB
Report a bug
Faster reading speed, GB/s
14.9
8.6
Average value in the tests
Faster write speed, GB/s
9.0
5.8
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
Panram International Corporation PUD42133C138G4NJK 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
34
74
Read speed, GB/s
8.6
14.9
Write speed, GB/s
5.8
9.0
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
1682
1925
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4A-H9 8GB
Kingston 99P5723-006.A00G 8GB
Panram International Corporation PUD42133C138G4NJK 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Corsair CMZ16GX3M2A2400C10 8GB
Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Kingston 9965589-017.D00G 8GB
Kingston 99U5584-017.A00LF 4GB
Corsair CMT32GX4M4C3200C14 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMT64GX4M8X3000C15 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology CT16G4SFDFD4A.M16FH 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Crucial Technology CT8G4SFS6266.M4FB 8GB
Samsung M471B5773DH0-CK0 2GB
Crucial Technology CT16G4DFRA32A.C8FB 16GB
A-DATA Technology ADOVE1A0834E 1GB
Crucial Technology BL16G32C16U4WL.M16FE 16GB
Kingston HP698651-154-MCN 8GB
G Skill Intl F4-3200C14-8GTRS 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMK8GX4M2D2666C16 4GB
Samsung M386B4G70DM0-CMA4 32GB
Apacer Technology GD2.1129WH.001 16GB
Samsung M3 78T5663RZ3-CE6 2GB
G Skill Intl F4-4000C17-8GTZRB 8GB
Kingston 9905403-061.A00LF 2GB
Patriot Memory (PDP Systems) 2666 C18 Series 16GB
AMD R538G1601U2S 8GB
Avant Technology J642GU42J9266NF 16GB
Report a bug
×
Bug description
Source link