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Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB
Samsung M378B5773DH0-CH9 2GB

Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB vs Samsung M378B5773DH0-CH9 2GB

Overall score
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Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB

Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB

Overall score
star star star star star
Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Differences Specifications Comments

Differences

Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    26 left arrow 39
    Around 33% lower latency
  • Faster reading speed, GB/s
    12.3 left arrow 11.7
    Average value in the tests
  • Faster write speed, GB/s
    7.4 left arrow 7.2
    Average value in the tests
Samsung M378B5773DH0-CH9 2GB Reasons to consider
Samsung M378B5773DH0-CH9 2GB
Report a bug

Specifications

Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB
Samsung M378B5773DH0-CH9 2GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    26 left arrow 39
  • Read speed, GB/s
    12.3 left arrow 11.7
  • Write speed, GB/s
    7.4 left arrow 7.2
  • Memory bandwidth, mbps
    10600 left arrow 10600
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC3-10600, 1.5V, CAS Supported: 6 7 8 9
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • Ranking PassMark (The more the better)
    1678 left arrow 1749

Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB RAM comparisons

SK Hynix HMT325U6CFR8C-H9 2GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Samsung M378B5773DH0-CH9 2GB RAM comparisons

Samsung M378B5673FH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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