RAM comparison Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs InnoDisk Corporation M4C0-AGS1TCSJ 16GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs InnoDisk Corporation M4C0-AGS1TCSJ 16GB

Overall score

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Overall score

Differences Specifications Comments

Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Below the latency in the PassMark tests, ns

65 101

Around 36% lower latency
Faster reading speed, GB/s

3 12.1

Average value in the tests

Reasons to consider
InnoDisk Corporation M4C0-AGS1TCSJ 16GB

Complete list of technical specifications

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

InnoDisk Corporation M4C0-AGS1TCSJ 16GB

Main characteristics

Other

Description

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)

572 1382

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns