RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
25
Around 4% lower latency
Faster reading speed, GB/s
16
15.9
Average value in the tests
Faster write speed, GB/s
12.5
12.0
Average value in the tests
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
Report a bug
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
25
Read speed, GB/s
16.0
15.9
Write speed, GB/s
12.5
12.0
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 12 14 15 16
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
3023
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB RAM comparisons
Corsair CMSO4GX3M1C1600C11 4GB
Samsung M393B5170EH1-CH9 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
A-DATA Technology DQVE1908 512MB
Kingston 9905702-017.A00G 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-4000C19-8GTZKW 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
Samsung M471B5173DB0-YK0 4GB
Kingston KHX3200C20S4/16G 16GB
Samsung DDR3 8GB 1600MHz 8GB
Corsair CMR16GX4M2Z3200C16 8GB
Kingston HP669238-071-HYC 4GB
G Skill Intl F4-3200C16-8GVS 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Crucial Technology BL8G32C16U4W.M8FE 8GB
Samsung M378B5273CH0-CH9 4GB
InnoDisk Corporation M4C0-AGS1TCIK 16GB
Kingston 99U5474-010.A00LF 2GB
Essencore Limited KD4AGU88C-26N1900 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston 9965604-008.D00G 16GB
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C
Kingston CBD26D4U9S8ME-8 8GB
Strontium EVMT8G1600U86S 8GB
Crucial Technology BLT8G4D26BFT4K.C8FD 8GB
Kingston KHX1600C9D3/4G 4GB
Crucial Technology CT4G4SFS824A.C8FBD2 4GB
SK Hynix HMT41GU7BFR8A-PB 8GB
Kingston KHX2400C12D4/16GX 16GB
Report a bug
×
Bug description
Source link