RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Wilk Elektronik S.A. GY2666D464L16/8G 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Wilk Elektronik S.A. GY2666D464L16/8G 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Wilk Elektronik S.A. GY2666D464L16/8G 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
Wilk Elektronik S.A. GY2666D464L16/8G 8GB
Report a bug
Below the latency in the PassMark tests, ns
23
24
Around -4% lower latency
Faster reading speed, GB/s
17.8
16
Average value in the tests
Faster write speed, GB/s
14.0
12.5
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Wilk Elektronik S.A. GY2666D464L16/8G 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
23
Read speed, GB/s
16.0
17.8
Write speed, GB/s
12.5
14.0
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
3086
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Wilk Elektronik S.A. GY2666D464L16/8G 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Wilk Elektronik S.A. GY2666D464L16/8G 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3200C14-8GTZKO 8GB
Kingston 99U5474-010.A00LF 2GB
SK Hynix HMA82GS6CJR8N-VK 16GB
SK Hynix HMT41GU7BFR8A-PB 8GB
Gold Key Technology Co Ltd GKE800UD102408-2666 8GB
Samsung DDR3 8GB 1600MHz 8GB
Gloway International Co. Ltd. TYP4U3200E16082C 8GB
Kingston KHX2133C11D3/4GX 4GB
Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB
G Skill Intl F4-3600C19-8GSXWB 8GB
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
Kingston HX318C10FK/4 4GB
Samsung M471A5644EB0-CPB 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3000C14-16GTZR 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Corsair CMK64GX4M2C3200C16 32GB
Crucial Technology CT102464BF160B.C16 8GB
Corsair CMR32GX4M4D3200C16 8GB
SK Hynix HYMP112U64CP8-S5 1GB
Micron Technology 16ATF2G64AZ-2G6J1 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMD32GX4M2C3200C14T 16GB
Kingston 9905403-011.A03LF 2GB
Transcend Information TS2GSH64V1B 16GB
Report a bug
×
Bug description
Source link