RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Kingston 9905403-061.A00LF 2GB
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB
Compare
Kingston 9905403-061.A00LF 2GB vs Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB
Overall score
Kingston 9905403-061.A00LF 2GB
Overall score
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Kingston 9905403-061.A00LF 2GB
Report a bug
Below the latency in the PassMark tests, ns
57
59
Around 3% lower latency
Reasons to consider
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB
Report a bug
Faster reading speed, GB/s
17.2
6.8
Average value in the tests
Faster write speed, GB/s
9.7
5.5
Average value in the tests
Higher memory bandwidth, mbps
25600
10600
Around 2.42 higher bandwidth
Specifications
Complete list of technical specifications
Kingston 9905403-061.A00LF 2GB
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
57
59
Read speed, GB/s
6.8
17.2
Write speed, GB/s
5.5
9.7
Memory bandwidth, mbps
10600
25600
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
1244
2181
Kingston 9905403-061.A00LF 2GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Corsair CMX8GX3M1A1600C11 8GB
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Crucial Technology CT51264BD1339.M16F 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N
Samsung M393B2G70BH0-CK0 16GB
ISD Technology Limited IM44GU48A30-GIIHM 4GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Crucial Technology BLS4G4D26BFSC.8FE 4GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Crucial Technology BL8G30C15U4W.M8FE 8GB
Corsair CMSX4GX3M1A1600C9 4GB
G Skill Intl F4-3200C15-8GTZKW 8GB
A-DATA Technology DQKD1A08 1GB
Samsung M393A1K43BB1-CTD 8GB
Qimonda 64T128020EDL2.5C2 1GB
Corsair CMWX16GC3600C18W2D 16GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Wilk Elektronik S.A. GX2426D464S/8GSBS2 8GB
Samsung M393B2G70BH0-CK0 16GB
Kingston 9905700-017.A00G 8GB
Kingston ACR32D4U2S8HD-8X 8GB
Samsung M378A1K43BB2-CRC 8GB
A-DATA Technology VDQVE1B16 2GB
Kingston HX426C16FB2/8-SP 8GB
Samsung M378T5663QZ3-CF7 2GB
Patriot Memory (PDP Systems) 3600 C17 Series 4GB
Hexon Technology Pte Ltd HEXON 1GB
Avant Technology W642GU42J2320NH 16GB
SK Hynix HYMP112U64CP8-S6 1GB
Crucial Technology BLS8G4D26BFSTK.8FD 8GB
Report a bug
×
Bug description
Source link