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Kingston SNY1333D3S9ELC/4G 4GB
A-DATA Technology AM1U16BC4P2-B19B 4GB

Kingston SNY1333D3S9ELC/4G 4GB vs A-DATA Technology AM1U16BC4P2-B19B 4GB

Overall score
star star star star star
Kingston SNY1333D3S9ELC/4G 4GB

Kingston SNY1333D3S9ELC/4G 4GB

Overall score
star star star star star
A-DATA Technology AM1U16BC4P2-B19B 4GB

A-DATA Technology AM1U16BC4P2-B19B 4GB

Differences Specifications Comments

Differences

Kingston SNY1333D3S9ELC/4G 4GB Reasons to consider
Kingston SNY1333D3S9ELC/4G 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    29 left arrow 84
    Around 65% lower latency
  • Faster reading speed, GB/s
    8.3 left arrow 2.3
    Average value in the tests
  • Faster write speed, GB/s
    4.5 left arrow 2.4
    Average value in the tests
A-DATA Technology AM1U16BC4P2-B19B 4GB Reasons to consider
A-DATA Technology AM1U16BC4P2-B19B 4GB
Report a bug
  • Higher memory bandwidth, mbps
    12800 left arrow 10600
    Around 1.21 higher bandwidth

Specifications

Complete list of technical specifications
Kingston SNY1333D3S9ELC/4G 4GB
A-DATA Technology AM1U16BC4P2-B19B 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    29 left arrow 84
  • Read speed, GB/s
    8.3 left arrow 2.3
  • Write speed, GB/s
    4.5 left arrow 2.4
  • Memory bandwidth, mbps
    10600 left arrow 12800
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 9-9-9-24 / 1600 MHz
  • Ranking PassMark (The more the better)
    1196 left arrow 469

Kingston SNY1333D3S9ELC/4G 4GB RAM comparisons

Samsung M471B5273DH0-YK0 4GB
Samsung M471B5273DH0-CH9 4GB

A-DATA Technology AM1U16BC4P2-B19B 4GB RAM comparisons

A-DATA Technology AD73I1B1672EG 2GB
Hynix Semiconductor (Hyundai Electronics) HMT451S6MFR8C-PB 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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