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Lexar Co Limited LD4AU016G-H3200GST 16GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB vs Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

Overall score
star star star star star
Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Overall score
star star star star star
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

Differences Specifications Comments

Differences

Lexar Co Limited LD4AU016G-H3200GST 16GB Reasons to consider
Lexar Co Limited LD4AU016G-H3200GST 16GB
Report a bug
  • Higher memory bandwidth, mbps
    25600 left arrow 21300
    Around 1.2% higher bandwidth
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB Reasons to consider
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    32 left arrow 33
    Around -3% lower latency
  • Faster reading speed, GB/s
    19.4 left arrow 17.8
    Average value in the tests
  • Faster write speed, GB/s
    16.3 left arrow 12.5
    Average value in the tests

Specifications

Complete list of technical specifications
Lexar Co Limited LD4AU016G-H3200GST 16GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    33 left arrow 32
  • Read speed, GB/s
    17.8 left arrow 19.4
  • Write speed, GB/s
    12.5 left arrow 16.3
  • Memory bandwidth, mbps
    25600 left arrow 21300
Other
  • Description
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    3285 left arrow 3726

Lexar Co Limited LD4AU016G-H3200GST 16GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB

Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Latest comparisons

Lexar Co Limited LD4AU016G-H3200GST 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 1
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