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Micron Technology 16KTF1G64AZ-1G6P1 8GB
Samsung M378B5273CH0-CK0 4GB

Micron Technology 16KTF1G64AZ-1G6P1 8GB vs Samsung M378B5273CH0-CK0 4GB

Overall score
star star star star star
Micron Technology 16KTF1G64AZ-1G6P1 8GB

Micron Technology 16KTF1G64AZ-1G6P1 8GB

Overall score
star star star star star
Samsung M378B5273CH0-CK0 4GB

Samsung M378B5273CH0-CK0 4GB

Differences Specifications Comments

Differences

Micron Technology 16KTF1G64AZ-1G6P1 8GB Reasons to consider
Micron Technology 16KTF1G64AZ-1G6P1 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    40 left arrow 41
    Around 2% lower latency
  • Faster reading speed, GB/s
    14.3 left arrow 13.1
    Average value in the tests
  • Faster write speed, GB/s
    9.4 left arrow 8.7
    Average value in the tests
Samsung M378B5273CH0-CK0 4GB Reasons to consider
Samsung M378B5273CH0-CK0 4GB
Report a bug

Specifications

Complete list of technical specifications
Micron Technology 16KTF1G64AZ-1G6P1 8GB
Samsung M378B5273CH0-CK0 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    40 left arrow 41
  • Read speed, GB/s
    14.3 left arrow 13.1
  • Write speed, GB/s
    9.4 left arrow 8.7
  • Memory bandwidth, mbps
    12800 left arrow 12800
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • Ranking PassMark (The more the better)
    2407 left arrow 2094

Micron Technology 16KTF1G64AZ-1G6P1 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160UD102408-2666 16GB

Samsung M378B5273CH0-CK0 4GB RAM comparisons

Samsung M378B5173DB0-CK0 4GB
Crucial Technology CT8G4DFS8213.M8FB 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Latest comparisons

Micron Technology 16KTF1G64AZ-1G6P1 8GB
Micron Technology 16KTF1G64AZ-1G6P1 8GB
Samsung M378B5273CH0-CK0 4GB
Samsung M378B5273CH0-CK0 4GB
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