Micron Technology 36ASF2G72PZ-2G1A2 16GB
Samsung M378A1G43TB1-CTD 8GB

Micron Technology 36ASF2G72PZ-2G1A2 16GB vs Samsung M378A1G43TB1-CTD 8GB

Overall score
star star star star star
Micron Technology 36ASF2G72PZ-2G1A2 16GB

Micron Technology 36ASF2G72PZ-2G1A2 16GB

Overall score
star star star star star
Samsung M378A1G43TB1-CTD 8GB

Samsung M378A1G43TB1-CTD 8GB

Differences

  • Below the latency in the PassMark tests, ns
    28 left arrow 52
    Around -86% lower latency
  • Faster reading speed, GB/s
    16.6 left arrow 10.2
    Average value in the tests
  • Faster write speed, GB/s
    13.7 left arrow 8.2
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 17500
    Around 1.22 higher bandwidth

Specifications

Complete list of technical specifications
Micron Technology 36ASF2G72PZ-2G1A2 16GB
Samsung M378A1G43TB1-CTD 8GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    52 left arrow 28
  • Read speed, GB/s
    10.2 left arrow 16.6
  • Write speed, GB/s
    8.2 left arrow 13.7
  • Memory bandwidth, mbps
    17500 left arrow 21300
Other
  • Description
    PC4-17500, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    no data left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    2319 left arrow 3007
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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