RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Micron Technology 4ATF1G64HZ-3G2B2 8GB
Compare
Micron Technology 4ATF1G64HZ-3G2E2 8GB vs Micron Technology 4ATF1G64HZ-3G2B2 8GB
Overall score
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Overall score
Micron Technology 4ATF1G64HZ-3G2B2 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Report a bug
Reasons to consider
Micron Technology 4ATF1G64HZ-3G2B2 8GB
Report a bug
Below the latency in the PassMark tests, ns
39
49
Around -26% lower latency
Faster reading speed, GB/s
16.1
15.8
Average value in the tests
Faster write speed, GB/s
11.9
11.0
Average value in the tests
Specifications
Complete list of technical specifications
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Micron Technology 4ATF1G64HZ-3G2B2 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
49
39
Read speed, GB/s
15.8
16.1
Write speed, GB/s
11.0
11.9
Memory bandwidth, mbps
25600
25600
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2534
2782
Micron Technology 4ATF1G64HZ-3G2E2 8GB RAM comparisons
Samsung M393B1K70CH0-CH9 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 4ATF1G64HZ-3G2B2 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
A-DATA Technology VDQVE1B16 2GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Samsung M471B5273CH0-CH9 4GB
Samsung M471A2K43DB1-CWE 16GB
Kingston KHX1866C9D3/8GX 8GB
Crucial Technology CT16G4SFD832A.C16FN 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
A-DATA Technology AX4S2800316G18-B 16GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Crucial Technology CT16G4SFRA266.C8FE 16GB
Corsair CML8GX3M2A1866C9 4GB
PUSKILL PJ16TFK1GM8 16GB
Samsung M393B1K70CH0-CH9 8GB
Apacer Technology GD2.1527WC.001 8GB
Kingston 9905471-006.A01LF 4GB
Crucial Technology BLS8G4D240FSEK.8FBR 8GB
Corsair CMY8GX3M2A2666C10 4GB
Kingston 9905624-051.A00G 8GB
Samsung M3 78T2863EHS-CF7 1GB
Kingston 9905700-017.A00G 8GB
Kingston ACR256X64D3S1333C9 2GB
Kingston KHX3466C16D4/8GX 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT16G4DFD8266.M16FD 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Golden Empire CL16-18-18 D4-3400 4GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Corsair CMR16GX4M2A2666C16 8GB
Report a bug
×
Bug description
Source link