RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Compare
Micron Technology 4ATF1G64HZ-3G2E2 8GB vs Micron Technology 8ATF2G64HZ-3G2E2 16GB
Overall score
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Overall score
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Report a bug
Below the latency in the PassMark tests, ns
49
51
Around 4% lower latency
Faster reading speed, GB/s
15.8
15.6
Average value in the tests
Reasons to consider
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Report a bug
Faster write speed, GB/s
11.8
11.0
Average value in the tests
Specifications
Complete list of technical specifications
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
49
51
Read speed, GB/s
15.8
15.6
Write speed, GB/s
11.0
11.8
Memory bandwidth, mbps
25600
25600
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2534
2687
Micron Technology 4ATF1G64HZ-3G2E2 8GB RAM comparisons
Samsung M393B1K70CH0-CH9 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471A5244CB0-CWE 4GB
Crucial Technology BLM8G44C19U4BL.M8FE1 8GB
Kingston ACR256X64D3S1333C9 2GB
SK Hynix HMAA1GU6CJR6N-XN 8GB
Kingston KP4T2F-PSB 4GB
Kingston KCDT82-MIE 4GB
A-DATA Technology ADOVE1A0834E 1GB
Samsung M391A1K43BB2-CTD 8GB
Kingston 9965433-034.A00LF 4GB
G Skill Intl F4-3600C18-16GTZN 16GB
A-DATA Technology DQVE1908 512MB
Avexir Technologies Corporation T 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Kingston KTD3KX-MIB 8GB
Kingston ACR16D3LS1KBG/8G 8GB
Apacer Technology 78.CAGRN.40C0B 8GB
ASint Technology SSA302G08-EGN1C 4GB
Kingston 9965596-023.B01G 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BL8G24C16U4B.8FB 8GB
Kingston ACR512X64D3S13C9G 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N
Kingston ACR512X64D3S13C9G 4GB
InnoDisk Corporation M4S0-AGS1O5IK 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Crucial Technology CT16G4DFD8266.M16FD 16GB
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology BLS8G4D240FSC.16FBD 8GB
Report a bug
×
Bug description
Source link