RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 8ATF2G64HZ-3G2E2 16GB
A-DATA Technology DDR4 3300 2OZ 4GB
Compare
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs A-DATA Technology DDR4 3300 2OZ 4GB
Overall score
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Overall score
A-DATA Technology DDR4 3300 2OZ 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Report a bug
Higher memory bandwidth, mbps
25600
19200
Around 1.33% higher bandwidth
Reasons to consider
A-DATA Technology DDR4 3300 2OZ 4GB
Report a bug
Below the latency in the PassMark tests, ns
17
51
Around -200% lower latency
Faster reading speed, GB/s
22
15.6
Average value in the tests
Faster write speed, GB/s
17.0
11.8
Average value in the tests
Specifications
Complete list of technical specifications
Micron Technology 8ATF2G64HZ-3G2E2 16GB
A-DATA Technology DDR4 3300 2OZ 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
51
17
Read speed, GB/s
15.6
22.0
Write speed, GB/s
11.8
17.0
Memory bandwidth, mbps
25600
19200
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2687
3731
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
A-DATA Technology DDR4 3300 2OZ 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston KVR533D2N4 512MB
G Skill Intl F4-3200C16-4GRK 4GB
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-3200C16-8GFX 8GB
Kingston 99U5474-038.A00LF 4GB
Chun Well Technology Holding Limited MD4U0836165BCW 8GB
Kingston 99U5403-036.A00G 4GB
Corsair CMD8GX4M2B3000C15 4GB
SK Hynix HYMP512S64CP8-Y5 1GB
Wilk Elektronik S.A. GR2133D464L15S/4G 4GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Crucial Technology CT16G4SFD8266 16GB
A-DATA Technology ADOVE1A0834E 1GB
Kingston HP26D4U6S8ME-8X 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT8G4DFD8213.C16FAR2 8GB
Micron Technology 18HTF12872AY-800F1 1GB
Crucial Technology BL8G26C16S4B.8FD 8GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-3200C16-4GRKD 4GB
Samsung M3 78T5663RZ3-CF7 2GB
Crucial Technology CT4G4DFS8213.C8FAR11 4GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N
Crucial Technology CT25664AA800.M16FM 2GB
Corsair CMK16GX4M4B3400C16 4GB
Corsair CML16GX3M2A1600C10 8GB
Kingston CBD26D4U9S8ME-8 8GB
Report a bug
×
Bug description
Source link