RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Samsung M393A2G40EB1-CRC 16GB
Compare
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Samsung M393A2G40EB1-CRC 16GB
Overall score
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Overall score
Samsung M393A2G40EB1-CRC 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Report a bug
Below the latency in the PassMark tests, ns
51
55
Around 7% lower latency
Faster reading speed, GB/s
15.6
9.3
Average value in the tests
Faster write speed, GB/s
11.8
7.4
Average value in the tests
Higher memory bandwidth, mbps
25600
19200
Around 1.33% higher bandwidth
Reasons to consider
Samsung M393A2G40EB1-CRC 16GB
Report a bug
Specifications
Complete list of technical specifications
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Samsung M393A2G40EB1-CRC 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
51
55
Read speed, GB/s
15.6
9.3
Write speed, GB/s
11.8
7.4
Memory bandwidth, mbps
25600
19200
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2687
2078
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung M393A2G40EB1-CRC 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
AMD AE34G1601U1 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Samsung M393A2G40EB1-CRC 16GB
Samsung M386B4G70DM0-CMA4 32GB
Samsung M392A4K40BM0-CRC 32GB
Kingston 99U5471-030.A00LF 8GB
Corsair CMWS8GL3200K16W4E 8GB
Samsung M471B1G73DB0-YK0 8GB
Essencore Limited IM48GU88A30-FGGHMB 8GB
Samsung M393B1K70CH0-CH9 8GB
Samsung M471A5143SB1-CRC 4GB
Kingston KVR533D2N4 512MB
Kingston 9905678-102.A00G 8GB
Swissbit MEU25664D6BC2EP-30 2GB
Corsair CMW64GX4M8Z2933C16 8GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Crucial Technology CT16G4DFD824A.M16FB 16GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
Crucial Technology CT8G4DFS824A.C8FJ 8GB
A-DATA Technology AD73I1C1674EV 4GB
Team Group Inc. 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Micron Technology 16GB 2133MHz DIMM 16GB
Samsung M378B5673EH1-CF8 2GB
Kingston 9905734-022.A00G 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9965662-016.A00G 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
G Skill Intl F4-4800C19-8GTESC 8GB
Report a bug
×
Bug description
Source link