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Micron Technology 8ATF2G64HZ-3G2E2 16GB
Samsung M471A5143EB0-CPB 4GB
Compare
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Samsung M471A5143EB0-CPB 4GB
Overall score
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Overall score
Samsung M471A5143EB0-CPB 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Report a bug
Faster reading speed, GB/s
15.6
13.5
Average value in the tests
Faster write speed, GB/s
11.8
10.3
Average value in the tests
Higher memory bandwidth, mbps
25600
17000
Around 1.51% higher bandwidth
Reasons to consider
Samsung M471A5143EB0-CPB 4GB
Report a bug
Below the latency in the PassMark tests, ns
35
51
Around -46% lower latency
Specifications
Complete list of technical specifications
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Samsung M471A5143EB0-CPB 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
51
35
Read speed, GB/s
15.6
13.5
Write speed, GB/s
11.8
10.3
Memory bandwidth, mbps
25600
17000
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2687
2155
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung M471A5143EB0-CPB 4GB RAM comparisons
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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