RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Compare
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Overall score
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Report a bug
Higher memory bandwidth, mbps
25600
19200
Around 1.33% higher bandwidth
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Report a bug
Below the latency in the PassMark tests, ns
18
51
Around -183% lower latency
Faster reading speed, GB/s
20.4
15.6
Average value in the tests
Faster write speed, GB/s
18.1
11.8
Average value in the tests
Specifications
Complete list of technical specifications
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
51
18
Read speed, GB/s
15.6
20.4
Write speed, GB/s
11.8
18.1
Memory bandwidth, mbps
25600
19200
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2687
3529
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905458-017.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M395T2863QZ4-CF76 1GB
Apacer Technology GD2.1527WC.001 8GB
SK Hynix HMA451U6AFR8N-TF 4GB
Crucial Technology CT16G4SFRA266.M16FR 16GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Micron Technology AFLD44EK2P 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Micron Technology 8ATF1G64AZ-2G6B1 8GB
takeMS International AG TMS2GB264D083805EV 2GB
Corsair CMK16GX4M4B3000C15 4GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
G Skill Intl F4-3400C16-16GTZ 16GB
Crucial Technology CT25664AA800.M16FM 2GB
A-DATA Technology AE4S240038G17-BHYA 8GB
Samsung M3 78T2863EHS-CF7 1GB
Crucial Technology BLT8G4D30AETA.K16FD 8GB
A-DATA Technology DOVF1B163G2G 2GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N
ASint Technology SSA302G08-EGN1C 4GB
SK Hynix HMA851U6CJR6N-UH 4GB
Kingston 9905403-444.A00LF 4GB
G Skill Intl F4-3600C17-8GTZSW 8GB
Crucial Technology BLT4G3D1337DT1TX0. 4GB
Micron Technology 72ASS8G72LZ-2G6D2 64GB
Kingston 99U5474-026.A00LF 4GB
Crucial Technology BL16G36C16U4B.M16FE1 16GB
SpecTek Incorporated ?????????????????? 2GB
G Skill Intl F4-3866C18-4GTZ 4GB
Report a bug
×
Bug description
Source link