RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Compare
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Overall score
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Report a bug
Higher memory bandwidth, mbps
25600
19200
Around 1.33% higher bandwidth
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Report a bug
Below the latency in the PassMark tests, ns
18
51
Around -183% lower latency
Faster reading speed, GB/s
20.4
15.6
Average value in the tests
Faster write speed, GB/s
18.1
11.8
Average value in the tests
Specifications
Complete list of technical specifications
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
51
18
Read speed, GB/s
15.6
20.4
Write speed, GB/s
11.8
18.1
Memory bandwidth, mbps
25600
19200
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2687
3529
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905458-017.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B5270CH0-CH9 4GB
Micron Technology 8ATF1G64HZ-2G6J1 8GB
Samsung M393B1G70BH0-YK0 8GB
Corsair CMK16GX4M2A2400C14 8GB
Kingston 99U5474-013.A00LF 2GB
Crucial Technology BLE4G4D26AFEA.8FADG 4GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Samsung M386B4G70DM0-CMA4 32GB
G Skill Intl F4-3000C15-16GTZ 16GB
Kingston HP698651-154-MCN 8GB
Crucial Technology BL8G36C16U4RL.M8FE1 8GB
Corsair CMX8GX3M2A1600C11 4GB
Kingston 9905678-110.A00G 8GB
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F4-3000C15-8GVR 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology C 8GB
Corsair CMX4GX3M2A1600C9 2GB
G Skill Intl F4-3200C16-4GRK 4GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Apacer Technology D12.2324CS.001 8GB
Kingston 9965525-140.A00LF 8GB
G Skill Intl F4-3300C16-16GTZSW 16GB
Kingston 9965433-034.A00LF 4GB
Gloway International (HK) STK2400CL17SNB16GB 16GB
Hexon Technology Pte Ltd HEXON 1GB
Corsair CMWX16GC3200C16W2E 16GB
Report a bug
×
Bug description
Source link