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Micron Technology 8ATF2G64HZ-3G2E2 16GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Comparar
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Pontuação geral
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Pontuação geral
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Diferenças
Especificações
Comentários
Diferenças
Razões a considerar
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Relatar um erro
Maior largura de banda de memória, mbps
25600
19200
Por volta de 1.33% maior largura de banda
Razões a considerar
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Relatar um erro
Abaixo da latência nos testes do PassMark, ns
18
51
Por volta de -183% menor latência
Velocidade de leitura mais rápida, GB/s
20.4
15.6
Valor médio nos testes
Velocidade de escrita mais rápida, GB/s
18.1
11.8
Valor médio nos testes
Especificações
Lista completa de especificações técnicas
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Características principais
Tipo de memória
DDR4
DDR4
Latência em PassMark, ns
51
18
Velocidade de leitura, GB/s
15.6
20.4
Velocidade de escrita, GB/s
11.8
18.1
Largura de banda de memória, mbps
25600
19200
Other
Descrição
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Tempos / Velocidade do relógio
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (Quanto mais, melhor)
2687
3529
Micron Technology 8ATF2G64HZ-3G2E2 16GB Comparações de RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB Comparações de RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905458-017.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Últimas comparações
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BL8G32C16U4BL.8FE 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) PSD44G240081 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT16G4SFRA32A.M16FR 16GB
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Crucial Technology CT51264BD1339.M16F 4GB
Thermaltake Technology Co Ltd R009D408GX2-3000C16B 8GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Chun Well Technology Holding Limited D4U0832161B 8GB
Samsung M378A1G43DB0-CPB 8GB
Micron Technology 16ATF1G64HZ-2G1B1 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) PSD44G213381 4GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Chun Well Technology Holding Limited CL16-20-20 D4-3200
Kingston SNY1600S11-4G-EDEG 4GB
Mushkin 99[2/7/4]209F 8GB
Hexon Technology Pte Ltd HEXON 1GB
Corsair CMR32GX4M2C3000C15 16GB
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