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Nanya Technology M2N1G64TUH8D5F-AC 1GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB vs ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

Overall score
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Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Overall score
star star star star star
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

Differences Specifications Comments

Differences

Nanya Technology M2N1G64TUH8D5F-AC 1GB Reasons to consider
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Report a bug
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB Reasons to consider
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    37 left arrow 92
    Around -149% lower latency
  • Faster reading speed, GB/s
    21.4 left arrow 2
    Average value in the tests
  • Faster write speed, GB/s
    14.3 left arrow 1,266.1
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 6400
    Around 3 higher bandwidth

Specifications

Complete list of technical specifications
Nanya Technology M2N1G64TUH8D5F-AC 1GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    92 left arrow 37
  • Read speed, GB/s
    2,105.4 left arrow 21.4
  • Write speed, GB/s
    1,266.1 left arrow 14.3
  • Memory bandwidth, mbps
    6400 left arrow 19200
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    339 left arrow 3448

Nanya Technology M2N1G64TUH8D5F-AC 1GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB
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ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB RAM comparisons

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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