RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Micron Technology 8ATF1G64AZ-3G2E1 8GB
Compare
Nanya Technology M2N1G64TUH8D5F-AC 1GB vs Micron Technology 8ATF1G64AZ-3G2E1 8GB
Overall score
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Overall score
Micron Technology 8ATF1G64AZ-3G2E1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Report a bug
Faster reading speed, GB/s
2
14.7
Average value in the tests
Reasons to consider
Micron Technology 8ATF1G64AZ-3G2E1 8GB
Report a bug
Below the latency in the PassMark tests, ns
38
92
Around -142% lower latency
Faster write speed, GB/s
12.4
1,266.1
Average value in the tests
Higher memory bandwidth, mbps
25600
6400
Around 4 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Micron Technology 8ATF1G64AZ-3G2E1 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
92
38
Read speed, GB/s
2,105.4
14.7
Write speed, GB/s
1,266.1
12.4
Memory bandwidth, mbps
6400
25600
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
Timings / Clock speed
5-5-5-15 / 800 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
339
2908
Nanya Technology M2N1G64TUH8D5F-AC 1GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB
Kingston 9905744-067.A00G 32GB
Micron Technology 8ATF1G64AZ-3G2E1 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Micron Technology 8ATF1G64AZ-3G2E1 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT8G4SFS824A.C8FBD1 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Kingston KM0VW4-MID 8GB
Crucial Technology CT51264BD1339.M16F 4GB
SK Hynix HMAA2GS6AJR8N-XN 16GB
Kingston 99U5471-056.A00LF 8GB
Kingston KHX3000C15/16GX 16GB
Kingston ACR512X64D3S13C9G 4GB
Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB
Samsung M471B5173DB0-YK0 4GB
A-DATA Technology DDR4 3333 2OZ 4GB
Kingston 99U5471-012.A00LF 4GB
V-Color Technology Inc. TA48G30S815G 8GB
TwinMOS 8DPT5MK8-TATP 2GB
SK Hynix HMA451R7MFR8N-TFTD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Mushkin MR[ABC]4U266GHHF8G 8GB
Transcend Information TS512MSK64W6H 4GB
Avant Technology W641GU42J7240NB 8GB
AMD R5316G1609U2K 8GB
Chun Well Technology Holding Limited D4U1636181DC 16GB
AMD R5S38G1601U2S 8GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 1
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Crucial Technology BL8G32C16S4B.8FE 8GB
Report a bug
×
Bug description
Source link