RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology M2Y51264TU88B0B-3C 512MB
Chun Well Technology Holding Limited D4U0832161B 8GB
Compare
Nanya Technology M2Y51264TU88B0B-3C 512MB vs Chun Well Technology Holding Limited D4U0832161B 8GB
Overall score
Nanya Technology M2Y51264TU88B0B-3C 512MB
Overall score
Chun Well Technology Holding Limited D4U0832161B 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology M2Y51264TU88B0B-3C 512MB
Report a bug
Faster reading speed, GB/s
3
19.1
Average value in the tests
Reasons to consider
Chun Well Technology Holding Limited D4U0832161B 8GB
Report a bug
Below the latency in the PassMark tests, ns
34
54
Around -59% lower latency
Faster write speed, GB/s
12.6
1,308.1
Average value in the tests
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology M2Y51264TU88B0B-3C 512MB
Chun Well Technology Holding Limited D4U0832161B 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
54
34
Read speed, GB/s
3,573.5
19.1
Write speed, GB/s
1,308.1
12.6
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
371
3178
Nanya Technology M2Y51264TU88B0B-3C 512MB RAM comparisons
Nanya Technology M2Y51264TU88B0B-37 512MB
Kingston KF3200C20S4/8G 8GB
Chun Well Technology Holding Limited D4U0832161B 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology BL8G30C15U4W.M8FE 8GB
Samsung M3 78T5663RZ3-CE6 2GB
Patriot Memory (PDP Systems) 3000 C18 Series 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Kingston 9905630-051.A00G 16GB
Kingston 9965525-140.A00LF 8GB
Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB
AMD R534G1601U1S-UO 4GB
G Skill Intl F4-4000C18-16GVK 16GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Crucial Technology BLE4G4D26AFEA.8FBD 4GB
A-DATA Technology DDR3 1600 4GB
Kingston 9905678-121.A00G 8GB
Samsung M471B5773DH0-CH9 2GB
G Skill Intl F4-3200C15-8GTZKW 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Ramaxel Technology RMSA3260MH78H8H-2666 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Samsung M391A2K43BB1-CPB 16GB
Samsung 1600 CL10 Series 8GB
Kingston 9965600-023.A00G 16GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Wilk Elektronik S.A. GR2400D464L17S/4G 4GB
Smart Modular SG564568FG8N6KF-Z2 2GB
G Skill Intl F4-3600C19-16GSXK 16GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Corsair CMRX8GD3000C16R4D 8GB
Report a bug
×
Bug description
Source link