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Nanya Technology NT2GC64B8HC0NS-CG 2GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB vs Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

Overall score
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Nanya Technology NT2GC64B8HC0NS-CG 2GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

Differences Specifications Comments

Differences

Nanya Technology NT2GC64B8HC0NS-CG 2GB Reasons to consider
Nanya Technology NT2GC64B8HC0NS-CG 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    28 left arrow 30
    Around 7% lower latency
  • Faster reading speed, GB/s
    11.7 left arrow 8.8
    Average value in the tests
  • Faster write speed, GB/s
    8.4 left arrow 5.6
    Average value in the tests
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Report a bug

Specifications

Complete list of technical specifications
Nanya Technology NT2GC64B8HC0NS-CG 2GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    28 left arrow 30
  • Read speed, GB/s
    11.7 left arrow 8.8
  • Write speed, GB/s
    8.4 left arrow 5.6
  • Memory bandwidth, mbps
    10600 left arrow 10600
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • Ranking PassMark (The more the better)
    1578 left arrow 1344

Nanya Technology NT2GC64B8HC0NS-CG 2GB RAM comparisons

Nanya Technology NT2GC64B88B0NS-CG 2GB
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Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB RAM comparisons

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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