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Nanya Technology NT2GC64B8HC0NS-CG 2GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Comparar
Nanya Technology NT2GC64B8HC0NS-CG 2GB vs Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Pontuação geral
Nanya Technology NT2GC64B8HC0NS-CG 2GB
Pontuação geral
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Diferenças
Especificações
Comentários
Diferenças
Razões a considerar
Nanya Technology NT2GC64B8HC0NS-CG 2GB
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Abaixo da latência nos testes do PassMark, ns
28
30
Por volta de 7% menor latência
Velocidade de leitura mais rápida, GB/s
11.7
8.8
Valor médio nos testes
Velocidade de escrita mais rápida, GB/s
8.4
5.6
Valor médio nos testes
Razões a considerar
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Relatar um erro
Especificações
Lista completa de especificações técnicas
Nanya Technology NT2GC64B8HC0NS-CG 2GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Características principais
Tipo de memória
DDR3
DDR3
Latência em PassMark, ns
28
30
Velocidade de leitura, GB/s
11.7
8.8
Velocidade de escrita, GB/s
8.4
5.6
Largura de banda de memória, mbps
10600
10600
Other
Descrição
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
Tempos / Velocidade do relógio
7-7-7-20 / 1333 MHz
7-7-7-20 / 1333 MHz
Ranking PassMark (Quanto mais, melhor)
1578
1344
Nanya Technology NT2GC64B8HC0NS-CG 2GB Comparações de RAM
Nanya Technology NT2GC64B88B0NS-CG 2GB
Kingston KVR16N11/8-SP 8GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB Comparações de RAM
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-4000C17-8GTZRB 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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Samsung M393B5270CH0-CH9 4GB
G Skill Intl F4-3400C16-8GTZSW 8GB
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