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Nanya Technology NT512T64U88B0BY-3C 512MB
AMD R744G2606U1S 4GB

Nanya Technology NT512T64U88B0BY-3C 512MB vs AMD R744G2606U1S 4GB

Overall score
star star star star star
Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

Overall score
star star star star star
AMD R744G2606U1S 4GB

AMD R744G2606U1S 4GB

Differences Specifications Comments

Differences

Nanya Technology NT512T64U88B0BY-3C 512MB Reasons to consider
Nanya Technology NT512T64U88B0BY-3C 512MB
Report a bug
  • Below the latency in the PassMark tests, ns
    71 left arrow 76
    Around 7% lower latency
  • Faster reading speed, GB/s
    2 left arrow 15.7
    Average value in the tests
AMD R744G2606U1S 4GB Reasons to consider
AMD R744G2606U1S 4GB
Report a bug
  • Faster write speed, GB/s
    8.7 left arrow 1,322.6
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 5300
    Around 3.62 higher bandwidth

Specifications

Complete list of technical specifications
Nanya Technology NT512T64U88B0BY-3C 512MB
AMD R744G2606U1S 4GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    71 left arrow 76
  • Read speed, GB/s
    2,831.6 left arrow 15.7
  • Write speed, GB/s
    1,322.6 left arrow 8.7
  • Memory bandwidth, mbps
    5300 left arrow 19200
Other
  • Description
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    399 left arrow 1809

Nanya Technology NT512T64U88B0BY-3C 512MB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB

AMD R744G2606U1S 4GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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