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Nanya Technology NT512T64U88B0BY-3C 512MB
AMD R744G2606U1S 4GB
比较
Nanya Technology NT512T64U88B0BY-3C 512MB vs AMD R744G2606U1S 4GB
总分
Nanya Technology NT512T64U88B0BY-3C 512MB
总分
AMD R744G2606U1S 4GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB
报告一个错误
低于PassMark测试中的延时,ns
71
76
左右 7% 更低的延时
更快的读取速度,GB/s
2
15.7
测试中的平均数值
需要考虑的原因
AMD R744G2606U1S 4GB
报告一个错误
更快的写入速度,GB/s
8.7
1,322.6
测试中的平均数值
更高的内存带宽,mbps
19200
5300
左右 3.62 更高的带宽
规格
完整的技术规格清单
Nanya Technology NT512T64U88B0BY-3C 512MB
AMD R744G2606U1S 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
71
76
读取速度,GB/s
2,831.6
15.7
写入速度,GB/s
1,322.6
8.7
内存带宽,mbps
5300
19200
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
399
1809
Nanya Technology NT512T64U88B0BY-3C 512MB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB
AMD R744G2606U1S 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9905584-016.A00LF 4GB
INTENSO M418039 8GB
SK Hynix HYMP112U64CP8-S6 1GB
Kingston 9905622-055.A00G 4GB
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology BLT4G4D26AFTA.8FBD 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Kingston 9965604-001.D00G 16GB
Samsung M471B5173QH0-YK0 4GB
Asgard VMA41UF-MEC1U2BQ2 4GB
Strontium EVMT8G1600U86S 8GB
Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB
Kingston 99U5474-010.A00LF 2GB
Micron Technology 8ATF1G64HZ-2G3B1 8GB
Samsung M3 78T2863QZS-CF7 1GB
Kingston 9905625-029.A00G 8GB
Corsair CML8GX3M2A1600C9 4GB
Micron Technology 8ATF2G64HZ-3G2B2 16GB
Samsung M378B5173BH0-CH9 4GB
Kingston 9965596-019.B01G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
AMD R538G1601U2S 8GB
G Skill Intl F4-3000C14-16GVK 16GB
Kingston 99U5474-037.A00LF 4GB
Micron Technology 18ASF1G72PDZ-2G6B1 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB
报告一个错误
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Bug description
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