RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT512T64U88B0BY-3C 512MB
Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB
Compare
Nanya Technology NT512T64U88B0BY-3C 512MB vs Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB
Overall score
Nanya Technology NT512T64U88B0BY-3C 512MB
Overall score
Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology NT512T64U88B0BY-3C 512MB
Report a bug
Reasons to consider
Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB
Report a bug
Below the latency in the PassMark tests, ns
29
71
Around -145% lower latency
Faster reading speed, GB/s
22.8
2
Average value in the tests
Faster write speed, GB/s
16.9
1,322.6
Average value in the tests
Higher memory bandwidth, mbps
21300
5300
Around 4.02 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology NT512T64U88B0BY-3C 512MB
Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
71
29
Read speed, GB/s
2,831.6
22.8
Write speed, GB/s
1,322.6
16.9
Memory bandwidth, mbps
5300
21300
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
399
3792
Nanya Technology NT512T64U88B0BY-3C 512MB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB
Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT51264BD1339.M16F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
SK Hynix HMT325S6BFR8C-H9 2GB
Kingston 9965604-027.D00G 8GB
Kingston 9905403-156.A00LF 2GB
Crucial Technology CT8G4DFD824A.C16FBD1 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Micron Technology 16ATF2G64HZ-2G6J1 16GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Crucial Technology BLS16G4D240FSE.16FD 16GB
Peak Electronics 256X64M-67E 2GB
Kingston KHX2133C14D4/8G 8GB
AMD R538G1601U2S-UO 8GB
Micron Technology 9ASF1G72AZ-2G3B1 8GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology CT32G4SFD8266.C16FB 32GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kllisre M471A1K43CB1-CTD 8GB
Corsair CMSO4GX3M1C1600C11 4GB
G Skill Intl F4-3000C15-8GTZB 8GB
Samsung DDR3 8GB 1600MHz 8GB
Corsair CMSX16GX4M2A2666C18 8GB
Kingston KP223C-ELD 2GB
Corsair CMW64GX4M4A2666C16 16GB
Samsung M471B5173QH0-YK0 4GB
Samsung M378A2K43EB1-CWE 16GB
Samsung M393B1G70BH0-CK0 8GB
Crucial Technology BLS8G4D30BESBK.8FB 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Avexir Technologies Corporation DDR4-2133 CL15 8GB 8GB
Report a bug
×
Bug description
Source link