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Nanya Technology NT512T64U88B0BY-3C 512MB
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

Nanya Technology NT512T64U88B0BY-3C 512MB vs Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

Overall score
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Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

Overall score
star star star star star
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

Differences Specifications Comments

Differences

Nanya Technology NT512T64U88B0BY-3C 512MB Reasons to consider
Nanya Technology NT512T64U88B0BY-3C 512MB
Report a bug
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB Reasons to consider
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    52 left arrow 71
    Around -37% lower latency
  • Faster reading speed, GB/s
    20.5 left arrow 2
    Average value in the tests
  • Faster write speed, GB/s
    10.1 left arrow 1,322.6
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 5300
    Around 3.21 higher bandwidth

Specifications

Complete list of technical specifications
Nanya Technology NT512T64U88B0BY-3C 512MB
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    71 left arrow 52
  • Read speed, GB/s
    2,831.6 left arrow 20.5
  • Write speed, GB/s
    1,322.6 left arrow 10.1
  • Memory bandwidth, mbps
    5300 left arrow 17000
Other
  • Description
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • Timings / Clock speed
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    399 left arrow 2472

Nanya Technology NT512T64U88B0BY-3C 512MB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
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Galaxy Microsystems Ltd. GOC2017-Fugger 8GB RAM comparisons

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