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PNY Electronics 4GBH2X02E99927-16 4GB
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

PNY Electronics 4GBH2X02E99927-16 4GB vs Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

Overall score
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PNY Electronics 4GBH2X02E99927-16 4GB

PNY Electronics 4GBH2X02E99927-16 4GB

Overall score
star star star star star
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

Differences Specifications Comments

Differences

PNY Electronics 4GBH2X02E99927-16 4GB Reasons to consider
PNY Electronics 4GBH2X02E99927-16 4GB
Report a bug
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB Reasons to consider
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    34 left arrow 63
    Around -85% lower latency
  • Faster reading speed, GB/s
    17.3 left arrow 6.1
    Average value in the tests
  • Faster write speed, GB/s
    14.5 left arrow 5.0
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 10600
    Around 1.6 higher bandwidth

Specifications

Complete list of technical specifications
PNY Electronics 4GBH2X02E99927-16 4GB
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    63 left arrow 34
  • Read speed, GB/s
    6.1 left arrow 17.3
  • Write speed, GB/s
    5.0 left arrow 14.5
  • Memory bandwidth, mbps
    10600 left arrow 17000
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    1274 left arrow 3606

PNY Electronics 4GBH2X02E99927-16 4GB RAM comparisons

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Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB RAM comparisons

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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