PNY Electronics 4GBH2X02E99927-16 4GB

Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

PNY Electronics 4GBH2X02E99927-16 4GB vs Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

总分

PNY Electronics 4GBH2X02E99927-16 4GB

PNY Electronics 4GBH2X02E99927-16 4GB

总分

Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

差异规格评论

差异

PNY Electronics 4GBH2X02E99927-16 4GB

需要考虑的原因
PNY Electronics 4GBH2X02E99927-16 4GB

报告一个错误

Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

需要考虑的原因
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 63

左右 -85% 更低的延时
更快的读取速度，GB/s

17.3 6.1

测试中的平均数值
更快的写入速度，GB/s

14.5 5.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

PNY Electronics 4GBH2X02E99927-16 4GB

Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

63 34
读取速度，GB/s

6.1 17.3
写入速度，GB/s

5.0 14.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1274 3606

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3300C16-16GTZSW 16GB

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Micron Technology CT8G4DFD8213.16FA2 8GB