PNY Electronics 8GBH2X04HAAA30-15 8GB
Micron Technology 36ASF2G72PZ-2G1B1 16GB

PNY Electronics 8GBH2X04HAAA30-15 8GB vs Micron Technology 36ASF2G72PZ-2G1B1 16GB

Overall score
star star star star star
PNY Electronics 8GBH2X04HAAA30-15 8GB

PNY Electronics 8GBH2X04HAAA30-15 8GB

Overall score
star star star star star
Micron Technology 36ASF2G72PZ-2G1B1 16GB

Micron Technology 36ASF2G72PZ-2G1B1 16GB

Differences

  • Below the latency in the PassMark tests, ns
    51 left arrow 61
    Around -20% lower latency
  • Faster reading speed, GB/s
    9.9 left arrow 6.3
    Average value in the tests
  • Faster write speed, GB/s
    8.1 left arrow 5.2
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 12800
    Around 1.33 higher bandwidth

Specifications

Complete list of technical specifications
PNY Electronics 8GBH2X04HAAA30-15 8GB
Micron Technology 36ASF2G72PZ-2G1B1 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    61 left arrow 51
  • Read speed, GB/s
    6.3 left arrow 9.9
  • Write speed, GB/s
    5.2 left arrow 8.1
  • Memory bandwidth, mbps
    12800 left arrow 17000
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    1287 left arrow 2314
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

Latest comparisons