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PNY Electronics PNY 2GB
INTENSO M418039 8GB

PNY Electronics PNY 2GB vs INTENSO M418039 8GB

Overall score
star star star star star
PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Overall score
star star star star star
INTENSO M418039 8GB

INTENSO M418039 8GB

Differences Specifications Comments

Differences

PNY Electronics PNY 2GB Reasons to consider
PNY Electronics PNY 2GB
Report a bug
  • Faster write speed, GB/s
    8.4 left arrow 7.4
    Average value in the tests
INTENSO M418039 8GB Reasons to consider
INTENSO M418039 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    20 left arrow 27
    Around -35% lower latency
  • Faster reading speed, GB/s
    16 left arrow 13.8
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 10600
    Around 1.6 higher bandwidth

Specifications

Complete list of technical specifications
PNY Electronics PNY 2GB
INTENSO M418039 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    27 left arrow 20
  • Read speed, GB/s
    13.8 left arrow 16.0
  • Write speed, GB/s
    8.4 left arrow 7.4
  • Memory bandwidth, mbps
    10600 left arrow 17000
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2274 left arrow 2414

PNY Electronics PNY 2GB RAM comparisons

Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

INTENSO M418039 8GB RAM comparisons

Crucial Technology CT2K102464BD160B 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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