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PNY Electronics PNY 2GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Compare
PNY Electronics PNY 2GB vs Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Overall score
PNY Electronics PNY 2GB
Overall score
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
PNY Electronics PNY 2GB
Report a bug
Below the latency in the PassMark tests, ns
27
31
Around 13% lower latency
Reasons to consider
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Report a bug
Faster reading speed, GB/s
20.5
13.8
Average value in the tests
Faster write speed, GB/s
15.5
8.4
Average value in the tests
Higher memory bandwidth, mbps
25600
10600
Around 2.42 higher bandwidth
Specifications
Complete list of technical specifications
PNY Electronics PNY 2GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
27
31
Read speed, GB/s
13.8
20.5
Write speed, GB/s
8.4
15.5
Memory bandwidth, mbps
10600
25600
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Timings / Clock speed
7-7-7-20 / 1333 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2274
3649
PNY Electronics PNY 2GB RAM comparisons
Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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RAM 2
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