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PNY Electronics PNY 2GB
Transcend Information TS512MSH64V4H 4GB
Compare
PNY Electronics PNY 2GB vs Transcend Information TS512MSH64V4H 4GB
Overall score
PNY Electronics PNY 2GB
Overall score
Transcend Information TS512MSH64V4H 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
PNY Electronics PNY 2GB
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Below the latency in the PassMark tests, ns
27
45
Around 40% lower latency
Faster reading speed, GB/s
13.8
5.3
Average value in the tests
Reasons to consider
Transcend Information TS512MSH64V4H 4GB
Report a bug
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
PNY Electronics PNY 2GB
Transcend Information TS512MSH64V4H 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
27
45
Read speed, GB/s
13.8
5.3
Write speed, GB/s
8.4
8.4
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2274
1535
PNY Electronics PNY 2GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
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PNY Electronics PNY 2GB
Transcend Information TS512MSH64V4H 4GB
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