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PNY Electronics PNY 2GB
Transcend Information TS512MSH64V4H 4GB

PNY Electronics PNY 2GB vs Transcend Information TS512MSH64V4H 4GB

总分
star star star star star
PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分
star star star star star
Transcend Information TS512MSH64V4H 4GB

Transcend Information TS512MSH64V4H 4GB

差异 规格 评论

差异

PNY Electronics PNY 2GB 需要考虑的原因
PNY Electronics PNY 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 45
    左右 40% 更低的延时
  • 更快的读取速度，GB/s
    13.8 left arrow 5.3
    测试中的平均数值
Transcend Information TS512MSH64V4H 4GB 需要考虑的原因
Transcend Information TS512MSH64V4H 4GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
PNY Electronics PNY 2GB
Transcend Information TS512MSH64V4H 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 45
  • 读取速度，GB/s
    13.8 left arrow 5.3
  • 写入速度，GB/s
    8.4 left arrow 8.4
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2274 left arrow 1535

PNY Electronics PNY 2GB RAM的比较

Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

Transcend Information TS512MSH64V4H 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT8G4DFS8266.C8FE 8GB
Crucial Technology CT8G4DFS8266.C8FE 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Transcend Information TS512MSH64V4H 4GB
Transcend Information TS512MSH64V4H 4GB
内存RAM
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Corsair CMH32GX4M2E3200C16 16GB
内存RAM
Corsair CMK64GX5M2B5200C40 32GB
Corsair CMK64GX5M2B5200C40 32GB
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Patriot Memory (PDP Systems) 4400 C18 Series 8GB
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Hexon Technology Pte Ltd HEXON 1GB
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Samsung M3 78T5663RZ3-CE6 2GB
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内存RAM
Kingston KP223C-ELD 2GB
Kingston KP223C-ELD 2GB
G Skill Intl F4-3333C16-16GTZB 16GB
G Skill Intl F4-3333C16-16GTZB 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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Corsair CMD32GX4M4C3466C16W 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
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内存RAM
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内存RAM
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内存RAM
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Kingston 99U5584-001.A00LF 4GB
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Corsair CMK64GX4M4B2800C14 16GB
内存RAM