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TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-3200C16-4GTZ 4GB

TwinMOS 8DHE3MN8-HATP 2GB vs G Skill Intl F4-3200C16-4GTZ 4GB

总分
star star star star star
TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分
star star star star star
G Skill Intl F4-3200C16-4GTZ 4GB

G Skill Intl F4-3200C16-4GTZ 4GB

差异 规格 评论

差异

TwinMOS 8DHE3MN8-HATP 2GB 需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 18
    测试中的平均数值
  • 更快的写入速度，GB/s
    870.4 left arrow 13.8
    测试中的平均数值
G Skill Intl F4-3200C16-4GTZ 4GB 需要考虑的原因
G Skill Intl F4-3200C16-4GTZ 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 87
    左右 -314% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-3200C16-4GTZ 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    87 left arrow 21
  • 读取速度，GB/s
    3,155.6 left arrow 18.0
  • 写入速度，GB/s
    870.4 left arrow 13.8
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    417 left arrow 3034

TwinMOS 8DHE3MN8-HATP 2GB RAM的比较

takeMS International AG TMS1GB264D083805EV 1GB
Ramaxel Technology RML1520AG38D6F-667 512MB

G Skill Intl F4-3200C16-4GTZ 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-4000C18-16GTRG 16GB
G Skill Intl F4-4000C18-16GTRG 16GB
内存RAM
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M4 70T2864QZ3-CF7 1GB
G Skill Intl F4-2400C15-16GFX 16GB
G Skill Intl F4-2400C15-16GFX 16GB
内存RAM
Kingston 9905403-134.A00LF 2GB
Kingston 9905403-134.A00LF 2GB
Micron Technology 16ATF2G64HZ-2G3B2 16GB
Micron Technology 16ATF2G64HZ-2G3B2 16GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Crucial Technology CT8G4DFS824A.M8FH 8GB
Crucial Technology CT8G4DFS824A.M8FH 8GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
V-GEN D4M8GL26A8TS6 8GB
V-GEN D4M8GL26A8TS6 8GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology NT8GA64D88AX3S-HR 8GB
Nanya Technology NT8GA64D88AX3S-HR 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-3200C16-4GTZ 4GB
G Skill Intl F4-3200C16-4GTZ 4GB
内存RAM
Samsung M393B1G70QH0-YK0 8GB
Samsung M393B1G70QH0-YK0 8GB
Kingston 9965640-008.A01G 32GB
Kingston 9965640-008.A01G 32GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Essencore Limited KD48GU880-32N220T 8GB
Essencore Limited KD48GU880-32N220T 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
G Skill Intl F4-4000C18-16GTZN 16GB
G Skill Intl F4-4000C18-16GTZN 16GB
内存RAM
A-DATA Technology DDR3 1866 2OZ 4GB
A-DATA Technology DDR3 1866 2OZ 4GB
Crucial Technology CT8G4SFS824A.C8FP 8GB
Crucial Technology CT8G4SFS824A.C8FP 8GB
内存RAM
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
Kingston KF3600C18D4/16GX 16GB
Kingston KF3600C18D4/16GX 16GB
内存RAM
Kingston 99U5471-012.A00LF 4GB
Kingston 99U5471-012.A00LF 4GB
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Ramaxel Technology RMSA3260MD78HAF-2666 8GB
Ramaxel Technology RMSA3260MD78HAF-2666 8GB
内存RAM