RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Ramos Technology EWB8GB681CA3-16IC 8GB
Shenzhen Technology Co Ltd 8GB
Compare
Ramos Technology EWB8GB681CA3-16IC 8GB vs Shenzhen Technology Co Ltd 8GB
Overall score
Ramos Technology EWB8GB681CA3-16IC 8GB
Overall score
Shenzhen Technology Co Ltd 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Ramos Technology EWB8GB681CA3-16IC 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
32
Around 22% lower latency
Reasons to consider
Shenzhen Technology Co Ltd 8GB
Report a bug
Faster reading speed, GB/s
15.9
15.3
Average value in the tests
Faster write speed, GB/s
11.9
9.8
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Ramos Technology EWB8GB681CA3-16IC 8GB
Shenzhen Technology Co Ltd 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
32
Read speed, GB/s
15.3
15.9
Write speed, GB/s
9.8
11.9
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2646
2831
Ramos Technology EWB8GB681CA3-16IC 8GB RAM comparisons
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EEB8GB681CAE-16IC 8GB
Shenzhen Technology Co Ltd 8GB RAM comparisons
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 93T5750CZA-CE6 2GB
Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB
Mushkin 991586 2GB
G Skill Intl F4-3400C16-8GTZ 8GB
TwinMOS 9DNPBNZB-TATP 4GB
Micron Technology 16ATF2G64HZ-2G3E1 16GB
SK Hynix HMT151R7TFR4C-H9 4GB
Kingston MSI24D4U7D8MH-16 16GB
Samsung DDR3 8GB 1600MHz 8GB
Corsair CMK16GX4M2F4500C19 8GB
A-DATA Technology AD73I1B1672EG 2GB
Teikon TMA41GU6AFR8N-TFSC 8GB
Samsung M3 93T5750CZA-CE6 2GB
Corsair CM4X8GE2400C16K4 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Kingston KF2666C15S4/16G 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Micron Technology 16ATF4G64HZ-2G6B2 32GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-2400C17-8GVR 8GB
Samsung M471B5173DB0-YK0 4GB
G Skill Intl F4-3200C14-8GTZ 8GB
Kingston 9965516-430.A00G 16GB
SanMax Technologies Inc. SMD-8G28HP-21P 8GB
Kingston KHX318C10FR/8G 8GB
Hewlett-Packard 7EH99AA# 16GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
Crucial Technology BLS8G4D240FSB.16FADG 8GB
Report a bug
×
Bug description
Source link