Samsung 1600 CL10 Series 8GB
Corsair CMV16GX4M1A2666C18 16GB

Samsung 1600 CL10 Series 8GB vs Corsair CMV16GX4M1A2666C18 16GB

Overall score
star star star star star
Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Overall score
star star star star star
Corsair CMV16GX4M1A2666C18 16GB

Corsair CMV16GX4M1A2666C18 16GB

Differences

  • Below the latency in the PassMark tests, ns
    25 left arrow 32
    Around 22% lower latency
  • Faster reading speed, GB/s
    16.1 left arrow 14
    Average value in the tests
  • Faster write speed, GB/s
    11.3 left arrow 10.1
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 12800
    Around 1.66 higher bandwidth

Specifications

Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Corsair CMV16GX4M1A2666C18 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    25 left arrow 32
  • Read speed, GB/s
    16.1 left arrow 14.0
  • Write speed, GB/s
    10.1 left arrow 11.3
  • Memory bandwidth, mbps
    12800 left arrow 21300
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    2764 left arrow 2660
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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